Quantum Nonlinear Platform
4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics
By Daniil M. Lukin, Constantin Dory, Melissa A. Guidry, Ki Youl Yang, Sattwik Deb Mishra, Rahul Trivedi, Marina Radulaski, Shuo Sun, Dries Vercruysse, Geun Ho Ahn & Jelena Vučković.
Abstract:
Optical quantum information processing will require highly efficient photonic circuits to connect quantum nodes on-chip and across long distances. This entails the efficient integration of optically addressable qubits into photonic circuits, as well as quantum frequency conversion to the telecommunications band. 4H-silicon carbide (4H-SiC) offers unique potential for on-chip quantum photonics, as it hosts a variety of promising colour centres and has a strong second-order optical nonlinearity. Here, we demonstrate within a single, monolithic platform the strong enhancement of emission from a colour centre and efficient optical frequency conversion. We develop a fabrication process for thin films of 4H-SiC, which are compatible with industry-standard, CMOS nanofabrication. This work provides a viable route towards industry-compatible, scalable colour-centre-based quantum technologies, including the monolithic generation and frequency conversion of quantum light on-chip.
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